Relaxation of femtosecond photoexcited electrons in a polar indirect band-gap semiconductor nanoparticle

Navinder Singh

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/867

Full metadata record

DC Field	Value	Language
dc.contributor.author	Navinder Singh	-
dc.date.accessioned	2005-12-26T08:56:43Z	-
dc.date.available	2005-12-26T08:56:43Z	-
dc.date.issued	2005-01	-
dc.identifier.citation	Pramana, 2005, Vol. 64, p111-118.	en
dc.identifier.issn	0304-4289	-
dc.identifier.uri	http://hdl.handle.net/2289/867	-
dc.description.abstract	A model calculation is given for the energy relaxation of a non-equilibrium distribution of hot electrons (holes) prepared in the conduction (valence) band of a polar indirect band-gap semiconductor, which has been subjected to homogeneous photo exci-tation by a femtosecond laser pulse. The model assumes that the pulsed photo excitation creates two distinct but spatially interpenetrating electron and hole non-equilibrium subsystems that initially relax non-radiatively through the electron (hole)-phonon processes towards the conduction (valence) band minimum (maximum), and finally radiatively through the phonon-assisted electron-hole recombination across the band-gap, which is a relatively slow process. This leads to an accumulation of electrons (holes) at the conduction (valence) band minimum (maximum). The resulting peaking of the carrier density and the entire evolution of the hot electron (hole) distribution has been calculated. The latter may be time resolved by a pump-probe study. The model is particularly applicable to a divided (nanometric) polar indirect band-gap semiconductor with a low carrier concentration and strong electron-phonon coupling, where the usual two-temperature model [1-4] may not be appropriate.	en
dc.format.extent	330186 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	en
dc.publisher	Indian Academy of Sciences, Bangalore, India.	en
dc.rights	Indian Academy of Sciences, Bangalore, India.	en
dc.subject	Electron gas	en
dc.subject	Fermi gas	en
dc.subject	Semiconductor componds	en
dc.title	Relaxation of femtosecond photoexcited electrons in a polar indirect band-gap semiconductor nanoparticle	en
dc.type	Article	en
Appears in Collections:	Research Papers (LAMP)

Files in This Item:

File	Description	Size	Format
2005 Pramana 64 p111.pdf	8p.	322.45 kB	Adobe PDF	View/Open

Show simple item record