Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/4207
Title: Tunable thermal conductivity in defect engineered nanowires at low temperatures
Authors: Dhara, Sajal
Solanki, Hari S.
Pawan, Arvind R.
Singh, Vibhor
Sengupta, Shamashis
Chalke, B.A.
Dhar, Abhishek
Gokhale, Mahesh
Bhattacharya, Arnab
Deshmukh, Mandar M.
Issue Date: Sep-2011
Publisher: The Americal Physical Society
Citation: Physical Review B, 2011, Vol.84, 12307
Abstract: We measure the thermal conductivity (κ) of individual InAs nanowires (NWs), and find that it is three orders of magnitude smaller than the bulk value in the temperature range of 10–50 K. We argue that the low κ arises from the scattering of phonons in the random superlattice of twin defects oriented perpendicular to the axis of the NW. We observe a significant electronic contribution arising from the surface accumulation layer, which gives rise to the tunability of κ with the application of an electrostatic gate and a magnetic field. Our devices and measurements of κ at different carrier concentrations and magnetic field offer a means to study unique aspects of nanoscale thermal transport.
Description: Open Access
URI: http://hdl.handle.net/2289/4207
ISSN: 1098-0121
1550-235X (Online)
Alternative Location: http://arxiv.org/abs/1106.2880
http://dx.doi.org/10.1103/PhysRevB.84.121307
http://adsabs.harvard.edu/abs/2011PhRvB..84l1307D
Copyright: 2011 The American Physical Society
Appears in Collections:Research Papers (TP)

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