Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/4207
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dc.contributor.authorDhara, Sajal-
dc.contributor.authorSolanki, Hari S.-
dc.contributor.authorPawan, Arvind R.-
dc.contributor.authorSingh, Vibhor-
dc.contributor.authorSengupta, Shamashis-
dc.contributor.authorChalke, B.A.-
dc.contributor.authorDhar, Abhishek-
dc.contributor.authorGokhale, Mahesh-
dc.contributor.authorBhattacharya, Arnab-
dc.contributor.authorDeshmukh, Mandar M.-
dc.date.accessioned2011-12-15T05:28:34Z-
dc.date.available2011-12-15T05:28:34Z-
dc.date.issued2011-09-
dc.identifier.citationPhysical Review B, 2011, Vol.84, 12307en
dc.identifier.issn1098-0121-
dc.identifier.issn1550-235X (Online)-
dc.identifier.urihttp://hdl.handle.net/2289/4207-
dc.descriptionOpen Accessen
dc.description.abstractWe measure the thermal conductivity (κ) of individual InAs nanowires (NWs), and find that it is three orders of magnitude smaller than the bulk value in the temperature range of 10–50 K. We argue that the low κ arises from the scattering of phonons in the random superlattice of twin defects oriented perpendicular to the axis of the NW. We observe a significant electronic contribution arising from the surface accumulation layer, which gives rise to the tunability of κ with the application of an electrostatic gate and a magnetic field. Our devices and measurements of κ at different carrier concentrations and magnetic field offer a means to study unique aspects of nanoscale thermal transport.en
dc.language.isoenen
dc.publisherThe Americal Physical Societyen
dc.relation.urihttp://arxiv.org/abs/1106.2880en
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.84.121307en
dc.relation.urihttp://adsabs.harvard.edu/abs/2011PhRvB..84l1307Den
dc.rights2011 The American Physical Societyen
dc.titleTunable thermal conductivity in defect engineered nanowires at low temperaturesen
dc.typeArticleen
Appears in Collections:Research Papers (TP)

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