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|Title: ||Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films|
|Authors: ||Vinodkumar, R.|
Pillai, Mahadevan V.P.
|Issue Date: ||15-Nov-2010 |
|Publisher: ||Elsevier B.V.|
|Citation: ||Applied Surface Science , 2010, Vol.257, p708|
|Abstract: ||Al doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E-2 mode and longitudinal optical A(1) (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of similar to 75% in the visible and near infrared region and low dc electrical resistivity of 5.94x10(-6) Omega m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film.|
|Description: ||Restricted Access.|
|Alternative Location: ||http://dx.doi.org/10.1016/j.apsusc.2010.07.044|
|Copyright: ||2010 Elsevier B. V.|
|Appears in Collections:||Research Papers (LAMP)|
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