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Title: Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films
Authors: Vinodkumar, R.
Navas, I.
Chalana, S.R.
Gopchandran, K.G.
Ganesan, V.
Philip, Reji
Sudheer, S.K.
Pillai, Mahadevan V.P.
Issue Date: 15-Nov-2010
Publisher: Elsevier B.V.
Citation: Applied Surface Science , 2010, Vol.257, p708
Abstract: Al doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E-2 mode and longitudinal optical A(1) (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of similar to 75% in the visible and near infrared region and low dc electrical resistivity of 5.94x10(-6) Omega m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film.
Description: Restricted Access.
ISSN: 0169-4332
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Copyright: 2010 Elsevier B. V.
Appears in Collections:Research Papers (LAMP)

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