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DC Field | Value | Language |
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dc.contributor.author | Vinodkumar, R. | - |
dc.contributor.author | Navas, I. | - |
dc.contributor.author | Chalana, S.R. | - |
dc.contributor.author | Gopchandran, K.G. | - |
dc.contributor.author | Ganesan, V. | - |
dc.contributor.author | Philip, Reji | - |
dc.contributor.author | Sudheer, S.K. | - |
dc.contributor.author | Pillai, Mahadevan V.P. | - |
dc.date.accessioned | 2011-04-08T07:20:28Z | - |
dc.date.available | 2011-04-08T07:20:28Z | - |
dc.date.issued | 2010-11-15 | - |
dc.identifier.citation | Applied Surface Science , 2010, Vol.257, p708 | en |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/2289/4008 | - |
dc.description | Restricted Access. | en |
dc.description.abstract | Al doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E-2 mode and longitudinal optical A(1) (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of similar to 75% in the visible and near infrared region and low dc electrical resistivity of 5.94x10(-6) Omega m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film. | en |
dc.language.iso | en | en |
dc.publisher | Elsevier B.V. | en |
dc.relation.uri | http://dx.doi.org/10.1016/j.apsusc.2010.07.044 | en |
dc.rights | 2010 Elsevier B. V. | en |
dc.title | Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films | en |
dc.type | Article | en |
Appears in Collections: | Research Papers (LAMP) |
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2010_Applied Surface Science_V257_p708-716.pdf Restricted Access | Restricted Access | 735.01 kB | Adobe PDF | View/Open Request a copy |
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