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http://hdl.handle.net/2289/2721
Title: | The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase |
Authors: | Johnson, M. Srinivasan, G. |
Issue Date: | 1978 |
Publisher: | IOP Publishing Ltd. |
Citation: | Physica Scripta, 1978, Vol.18, p476-480 |
Abstract: | We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder. |
Description: | Restricted Access. |
URI: | http://hdl.handle.net/2289/2721 |
ISSN: | 0031-8949 1402-4896 (Online) |
Alternative Location: | http://dx.doi.org/10.1088/0031-8949/18/6/026 |
Copyright: | 1978 IOP Publishing Ltd. |
Appears in Collections: | Research Papers (TP) |
Files in This Item:
File | Description | Size | Format | |
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1978 Physica Scripta V18 p476.pdf Restricted Access | Restricted Access | 305.59 kB | Adobe PDF | View/Open Request a copy |
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