The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2721

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DC Field	Value	Language
dc.contributor.author	Johnson, M.	-
dc.contributor.author	Srinivasan, G.	-
dc.date.accessioned	2007-06-11T09:43:19Z	-
dc.date.available	2007-06-11T09:43:19Z	-
dc.date.issued	1978	-
dc.identifier.citation	Physica Scripta, 1978, Vol.18, p476-480	en
dc.identifier.issn	0031-8949	-
dc.identifier.issn	1402-4896 (Online)	-
dc.identifier.uri	http://hdl.handle.net/2289/2721	-
dc.description	Restricted Access.	en
dc.description.abstract	We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder.	en
dc.format.extent	312927 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	en
dc.publisher	IOP Publishing Ltd.	en
dc.relation.uri	http://dx.doi.org/10.1088/0031-8949/18/6/026	en
dc.rights	1978 IOP Publishing Ltd.	en
dc.title	The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase	en
dc.type	Article	en
Appears in Collections:	Research Papers (TP)

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