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http://hdl.handle.net/2289/2721
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Johnson, M. | - |
dc.contributor.author | Srinivasan, G. | - |
dc.date.accessioned | 2007-06-11T09:43:19Z | - |
dc.date.available | 2007-06-11T09:43:19Z | - |
dc.date.issued | 1978 | - |
dc.identifier.citation | Physica Scripta, 1978, Vol.18, p476-480 | en |
dc.identifier.issn | 0031-8949 | - |
dc.identifier.issn | 1402-4896 (Online) | - |
dc.identifier.uri | http://hdl.handle.net/2289/2721 | - |
dc.description | Restricted Access. | en |
dc.description.abstract | We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder. | en |
dc.format.extent | 312927 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | en |
dc.publisher | IOP Publishing Ltd. | en |
dc.relation.uri | http://dx.doi.org/10.1088/0031-8949/18/6/026 | en |
dc.rights | 1978 IOP Publishing Ltd. | en |
dc.title | The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase | en |
dc.type | Article | en |
Appears in Collections: | Research Papers (TP) |
Files in This Item:
File | Description | Size | Format | |
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1978 Physica Scripta V18 p476.pdf Restricted Access | Restricted Access | 305.59 kB | Adobe PDF | View/Open Request a copy |
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