RRI Digital Repository >
07. Theoretical Physics >
Research Papers (TP) >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2721

Title: The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase
Authors: Johnson, M.
Srinivasan, G.
Issue Date: 1978
Publisher: IOP Publishing Ltd.
Citation: Physica Scripta, 1978, Vol.18, p476-480
Abstract: We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder.
Description: Restricted Access.
URI: http://hdl.handle.net/2289/2721
ISSN: 0031-8949
1402-4896 (Online)
Alternative Location: http://dx.doi.org/10.1088/0031-8949/18/6/026
Copyright: 1978 IOP Publishing Ltd.
Appears in Collections:Research Papers (TP)

Files in This Item:

File Description SizeFormat
1978 Physica Scripta V18 p476.pdfRestricted Access305.59 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


    RRI Library DSpace