Ultra-low noise GaAs FET amplifiers for L and C bands
| dc.contributor.author | Ganesan, R | |
| dc.contributor.author | Mascarenhas, Smiles K | |
| dc.contributor.author | Sarma, N V G | |
| dc.date.accessioned | 2007-06-11T08:50:24Z | |
| dc.date.available | 2007-06-11T08:50:24Z | |
| dc.date.issued | 1984 | |
| dc.description | Restricted Access. | en |
| dc.description.abstract | Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature. | en |
| dc.format.extent | 597075 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111 | en |
| dc.identifier.uri | http://hdl.handle.net/2289/2686 | |
| dc.language.iso | en | en |
| dc.title | Ultra-low noise GaAs FET amplifiers for L and C bands | en |
| dc.type | Article | en |