Ultra-low noise GaAs FET amplifiers for L and C bands
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Abstract
Ultra Low Noise Gals PET amplifiers incorporati& source
inductance feedback to obtain low input VSWR have been deacribed.
The measured average noise temperature of 52K -
(~oise Figure 0.7d~) at room temperature of the L-Band Amplifier
reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera-
. ture of 24K. The C-Band Amplifier has an average noiae temperature
of 120K (~oise Figure 1,Sd~) at room temperature.
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Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111