Title:	Evolution of I-V Characteristics and Photo Effects of Heterojunction LBMO/ZnO Prepared by IBS
Authors:	Mori, Toshiki Yokura, Miyoshi Matsui, Masahito Reddy, S Lakshmi Philip, Reji John, Rita Nishikawa, Hiroaki Iwata, Nobuyuki Nakamura, Yoshinobu Kaneko, Satoru Endo, Tamio
Keywords:	Hetero p-n Junction I-V Characteristics Influence by Current La (Ba)MnO3/ZnO Photo Effect Rectification Resistive Switching
Issue Date:	Jun-2015
Publisher:	Solid State Phenomena
Citation:	Solid State Phenomena, 2015, Vol.230, p19-27
Abstract:	The hetero p-n junctions of LBMO/ZnO were fabricated by ion beam sputtering. The sample shows clear temperature-dependent rectifying current (I)-voltage (V) characteristics, and junction resistance vs temperature curve is reflected by the CMR nature based on DEC model. The sample shows two-step switching, then the I-V is composed of very-low-resistance (VLR), low-resistance (LR) and high-resistance (HR) regions. The whole I-V behavior is changed by measurement running current. The switching is caused by the spot current, and the original VLR is restored when the current is reduced. The mechanism of switching is proposed in terms of the percolation paths composed of metallic FM-grains. Photo illumination effect on the I-V was investigated. The currents are increased in VLR and HR regions by the illumination. Two origins are possible, electronic process due to hole injection, and phase process. The percolation path might be reinforced by the light.
Description:	Restricted Access.
URI:	http://hdl.handle.net/2289/8461
ISSN:	1662-9779
Alternative Location:	http://dx.doi.org/10.4028/www.scientific.net/SSP.230.19
Copyright:	2015 Trans Tech Publications, Switzerland
Appears in Collections:	Research Papers (LAMP)

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