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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/8461
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dc.contributor.authorMori, Toshiki-
dc.contributor.authorYokura, Miyoshi-
dc.contributor.authorMatsui, Masahito-
dc.contributor.authorReddy, S Lakshmi-
dc.contributor.authorPhilip, Reji-
dc.contributor.authorJohn, Rita-
dc.contributor.authorNishikawa, Hiroaki-
dc.contributor.authorIwata, Nobuyuki-
dc.contributor.authorNakamura, Yoshinobu-
dc.contributor.authorKaneko, Satoru-
dc.contributor.authorEndo, Tamio-
dc.date.accessioned2025-08-28T04:18:14Z-
dc.date.available2025-08-28T04:18:14Z-
dc.date.issued2015-06-
dc.identifier.citationSolid State Phenomena, 2015, Vol.230, p19-27en_US
dc.identifier.issn1662-9779-
dc.identifier.urihttp://hdl.handle.net/2289/8461-
dc.descriptionRestricted Access.en_US
dc.description.abstractThe hetero p-n junctions of LBMO/ZnO were fabricated by ion beam sputtering. The sample shows clear temperature-dependent rectifying current (I)-voltage (V) characteristics, and junction resistance vs temperature curve is reflected by the CMR nature based on DEC model. The sample shows two-step switching, then the I-V is composed of very-low-resistance (VLR), low-resistance (LR) and high-resistance (HR) regions. The whole I-V behavior is changed by measurement running current. The switching is caused by the spot current, and the original VLR is restored when the current is reduced. The mechanism of switching is proposed in terms of the percolation paths composed of metallic FM-grains. Photo illumination effect on the I-V was investigated. The currents are increased in VLR and HR regions by the illumination. Two origins are possible, electronic process due to hole injection, and phase process. The percolation path might be reinforced by the light.en_US
dc.language.isoenen_US
dc.publisherSolid State Phenomenaen_US
dc.relation.urihttp://dx.doi.org/10.4028/www.scientific.net/SSP.230.19en_US
dc.rights2015 Trans Tech Publications, Switzerlanden_US
dc.subjectHetero p-n Junctionen_US
dc.subjectI-V Characteristicsen_US
dc.subjectInfluence by Currenten_US
dc.subjectLa (Ba)MnO3/ZnOen_US
dc.subjectPhoto Effecten_US
dc.subjectRectificationen_US
dc.subjectResistive Switchingen_US
dc.titleEvolution of I-V Characteristics and Photo Effects of Heterojunction LBMO/ZnO Prepared by IBSen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (LAMP)

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