Please use this identifier to cite or link to this item:
http://hdl.handle.net/2289/8459
Title: | Dopant-configuration controlled carrier scattering in graphene |
Authors: | Anand, Benoy Karakaya, Mehmet Prakash, Gyan Sai, S Siva Sankara Philip, Reji Ayala, Paola Srivastava, Anurag Sood, Ajay K Rao, Apparao M Podila, Ramakrishna |
Issue Date: | Jun-2015 |
Publisher: | RSC Advances |
Citation: | RSC Advances, 2015, Vol.5, p59556-59563 |
Abstract: | Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron–electron or electron–phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (La). |
Description: | Open Access. |
URI: | http://hdl.handle.net/2289/8459 |
ISSN: | 2046-2069 |
Alternative Location: | http://dx.doi.org/10.1039/C5RA05338B |
Copyright: | The Royal Society of Chemistry 2015 |
Appears in Collections: | Research Papers (LAMP) |
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2015_RSC Advances_Vol.5_p59556-59563.pdf Restricted Access | 596.54 kB | Adobe PDF | View/Open Request a copy |
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