Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/8459
Title: Dopant-configuration controlled carrier scattering in graphene
Authors: Anand, Benoy
Karakaya, Mehmet
Prakash, Gyan
Sai, S Siva Sankara
Philip, Reji
Ayala, Paola
Srivastava, Anurag
Sood, Ajay K
Rao, Apparao M
Podila, Ramakrishna
Issue Date: Jun-2015
Publisher: RSC Advances
Citation: RSC Advances, 2015, Vol.5, p59556-59563
Abstract: Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron–electron or electron–phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (La).
Description: Open Access.
URI: http://hdl.handle.net/2289/8459
ISSN: 2046-2069
Alternative Location: http://dx.doi.org/10.1039/C5RA05338B
Copyright: The Royal Society of Chemistry 2015
Appears in Collections:Research Papers (LAMP)

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