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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/8459
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dc.contributor.authorAnand, Benoy-
dc.contributor.authorKarakaya, Mehmet-
dc.contributor.authorPrakash, Gyan-
dc.contributor.authorSai, S Siva Sankara-
dc.contributor.authorPhilip, Reji-
dc.contributor.authorAyala, Paola-
dc.contributor.authorSrivastava, Anurag-
dc.contributor.authorSood, Ajay K-
dc.contributor.authorRao, Apparao M-
dc.contributor.authorPodila, Ramakrishna-
dc.date.accessioned2025-08-28T04:17:39Z-
dc.date.available2025-08-28T04:17:39Z-
dc.date.issued2015-06-
dc.identifier.citationRSC Advances, 2015, Vol.5, p59556-59563en_US
dc.identifier.issn2046-2069-
dc.identifier.urihttp://hdl.handle.net/2289/8459-
dc.descriptionOpen Access.en_US
dc.description.abstractControlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron–electron or electron–phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (La).en_US
dc.language.isoenen_US
dc.publisherRSC Advancesen_US
dc.relation.urihttp://dx.doi.org/10.1039/C5RA05338Ben_US
dc.rightsThe Royal Society of Chemistry 2015en_US
dc.titleDopant-configuration controlled carrier scattering in grapheneen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (LAMP)

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