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http://hdl.handle.net/2289/2686| Title: | Ultra-low noise GaAs FET amplifiers for L and C bands |
| Authors: | Ganesan, R. Mascarenhas, Smiles K. Sarma, N.V.G. |
| Issue Date: | 1984 |
| Citation: | Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111 |
| Abstract: | Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature. |
| Description: | Restricted Access. |
| URI: | http://hdl.handle.net/2289/2686 |
| Appears in Collections: | Research Papers (A&A) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1984 Proc national symp on microwave comm systems p98.pdf Restricted Access | Restricted Access | 583.08 kB | Adobe PDF | View/Open Request a copy |
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