Please use this identifier to cite or link to this item:
http://hdl.handle.net/2289/2686
Title: | Ultra-low noise GaAs FET amplifiers for L and C bands |
Authors: | Ganesan, R. Mascarenhas, Smiles K. Sarma, N.V.G. |
Issue Date: | 1984 |
Citation: | Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111 |
Abstract: | Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature. |
Description: | Restricted Access. |
URI: | http://hdl.handle.net/2289/2686 |
Appears in Collections: | Research Papers (A&A) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1984 Proc national symp on microwave comm systems p98.pdf Restricted Access | Restricted Access | 583.08 kB | Adobe PDF | View/Open Request a copy |
Items in RRI Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.