Ultra-low noise GaAs FET amplifiers for L and C bands

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2686

Full metadata record

DC Field	Value	Language
dc.contributor.author	Ganesan, R.	-
dc.contributor.author	Mascarenhas, Smiles K.	-
dc.contributor.author	Sarma, N.V.G.	-
dc.date.accessioned	2007-06-11T08:50:24Z	-
dc.date.available	2007-06-11T08:50:24Z	-
dc.date.issued	1984	-
dc.identifier.citation	Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111	en
dc.identifier.uri	http://hdl.handle.net/2289/2686	-
dc.description	Restricted Access.	en
dc.description.abstract	Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature.	en
dc.format.extent	597075 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	en
dc.title	Ultra-low noise GaAs FET amplifiers for L and C bands	en
dc.type	Article	en
Appears in Collections:	Research Papers (A&A)

Files in This Item:

File	Description	Size	Format
1984 Proc national symp on microwave comm systems p98.pdf Restricted Access	Restricted Access	583.08 kB	Adobe PDF	View/Open Request a copy