Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2686
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dc.contributor.authorGanesan, R.-
dc.contributor.authorMascarenhas, Smiles K.-
dc.contributor.authorSarma, N.V.G.-
dc.date.accessioned2007-06-11T08:50:24Z-
dc.date.available2007-06-11T08:50:24Z-
dc.date.issued1984-
dc.identifier.citationProceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111en
dc.identifier.urihttp://hdl.handle.net/2289/2686-
dc.descriptionRestricted Access.en
dc.description.abstractUltra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature.en
dc.format.extent597075 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.titleUltra-low noise GaAs FET amplifiers for L and C bandsen
dc.typeArticleen
Appears in Collections:Research Papers (A&A)

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