Please use this identifier to cite or link to this item:
http://hdl.handle.net/2289/7517Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | John, Jibi | - |
| dc.contributor.author | Dhananjaya, M. | - |
| dc.contributor.author | Philip, Reji | - |
| dc.contributor.author | +5 Co-Authors | - |
| dc.date.accessioned | 2020-08-17T08:41:28Z | - |
| dc.date.available | 2020-08-17T08:41:28Z | - |
| dc.date.issued | 2020-08 | - |
| dc.identifier.citation | Journal of Materials Science : Materials in Electronics, 2020, Vol.31, p11159–11176 | en_US |
| dc.identifier.issn | 0957-4522 | - |
| dc.identifier.issn | 1573-482X (online) | - |
| dc.identifier.uri | http://hdl.handle.net/2289/7517 | - |
| dc.description | Restricted Access | en_US |
| dc.description.abstract | ABO3 perovskites show unusual property modifications by proper substitution at the A and B sites. Polycrystalline perovskite BaSnO3 samples doped with different concentrations of manganese (BaSn1−xMnxO3) were synthesized by solid-state reaction method. Rietveld refinement of XRD analysis confirmed the structure and phase purity of the synthesized compound. Diamagnetic-to-paramagnetic transition and optical band gap tuning indicate the substitutional effect of Mn in the host BaSnO3 lattice. The strong reverse saturable absorption of the synthesized samples makes them ideal candidate for optical limiting applications. The frequency and composition-dependent dielectric studies reveal that Mn-doped BaSn1−xMnxO3 can be used for high-frequency device applications. The cycling retention in the specific capacitance of 96.2% at a current density of 25 mA/g even after 2500 cycles in Mn-doped BaSnO3 electrode can be used in energy storage devices for super capacitor applications. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Verlag | en_US |
| dc.relation.uri | https://doi.org/10.1007/s10854-020-03665-4 | en_US |
| dc.rights | 2020 Springer Verlag | en_US |
| dc.title | Effect of manganese doping on the structural, morphological, optical, electrical, and magnetic properties of BaSnO3 | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Research Papers (LAMP) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2020_Journal of Materials Science_Materials in Electronics_ Vol.31_p11159.pdf Restricted Access | Restricted Access | 7.78 MB | Adobe PDF | View/Open Request a copy |
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