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http://hdl.handle.net/2289/7172
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DC Field | Value | Language |
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dc.contributor.author | Deshpande, Preeti | - |
dc.contributor.author | Vilayurganapathy, Subramanian | - |
dc.contributor.author | Bhat, K. N | - |
dc.date.accessioned | 2019-03-05T18:03:52Z | - |
dc.date.available | 2019-03-05T18:03:52Z | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | Applied Physics A : Materials Science and Processing, 2019, Vol.125:181 | en_US |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.issn | 1432-0630 (online) | - |
dc.identifier.uri | http://hdl.handle.net/2289/7172 | - |
dc.description | Restricted Access. | en_US |
dc.description.abstract | Ion implantation has been widely used in various device fabrication applications, including that of optoelectronic components. Focused Ion Beam (FIB) is an especially versatile implantation method, since it can be used for well controlled doping with sub-micron spatial precision. Here, we report FIB induced gallium doping in micrometer-sized regions on shallow Silicon p-n junction devices and its effect on the device optoelectronic properties investigated through micro-spectroscopic measurements. The effect of varying dose levels has been quantified in terms of photo voltage, Raman spectroscopy, XPS and reluctance measurements to investigate the effect of radiation damage and surface amortization. Based on these observations we report simultaneous occurrence of two scenarios, channeling of high-energy gallium ions beyond the junction depth, as well as formation of an amorphous silicon layer, which cumulatively degrade the optoelectronic properties of the diodes. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer-Verlag | en_US |
dc.relation.uri | https://doi.org/10.1007/s00339-019-2467-2 | en_US |
dc.rights | 2019 Springer Verlag Berlin Heidelberg | en_US |
dc.title | Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy | en_US |
dc.type | Article | en_US |
dc.additional | Supplementary Information Available | en_US |
Appears in Collections: | Research Papers (SCM) |
Files in This Item:
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2019_Applied Physics A_Vol.125_p181.pdf Restricted Access | Restricted Access | 1.65 MB | Adobe PDF | View/Open Request a copy |
2019_Applied Physics A_Vol.125_p181_Supp Material.pdf Restricted Access | Restricted Access | 250.58 kB | Adobe PDF | View/Open Request a copy |
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