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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/6880
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dc.contributor.authorNivas, Jijil J.J.-
dc.contributor.authorAnoop, K K-
dc.contributor.authorBruzzese, Riccardo-
dc.contributor.authorPhilip, Reji-
dc.contributor.authorAmoruso, Salvatore-
dc.date.accessioned2018-05-07T17:29:59Z-
dc.date.available2018-05-07T17:29:59Z-
dc.date.issued2018-03-20-
dc.identifier.citationApplied Physics Letters, 2018, Vol.112, p121601en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118(Online)-
dc.identifier.urihttp://hdl.handle.net/2289/6880-
dc.descriptionRestricted Access. An open-access version is available at arXiv.org (one of the alternative locations)en_US
dc.description.abstractWe have analyzed the effects of the laser pulse wavelength (400 nm) on femtosecond laser surface structuring of silicon. The features of the produced surface structures are investigated as a function of the number of pulses, N, and compared with the surface textures produced by more standard near-infrared (800 nm) laser pulses at a similar level of excitation. Our experimental findings highlight the importance of the light wavelength for the formation of the supra-wavelength grooves, and, for a large number of pulses (N ≈ 1000), the generation of other periodic structures (stripes) at 400 nm, which are not observed at 800 nm. These results provide interesting information on the generation of various surface textures, addressing the effect of the laser pulse wavelength on the generation of grooves and stripes.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.urihttps://doi.org/10.1063/1.5011134en_US
dc.rights2018 American Institute of Physics This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleDirect femtosecond laser surface structuring of crystalline silicon at 400 n men_US
dc.typeArticleen_US
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