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http://hdl.handle.net/2289/5571
Title: | Temperature-dependent electron mobility in InAs nanowires |
Authors: | Gupta, Nupur Song, Yipu Holloway, Gregory W. Sinha, Urbasi Haapamaki, Chris M. LaPierre, Ray R. Baugh, Jonathan |
Issue Date: | Jun-2013 |
Publisher: | IOP Publishing |
Citation: | Nanotechnology, 2013, Vol.24, 225202 |
Abstract: | Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10 to 200 K. The mobility increases with temperatures below ~30–50 K, and then decreases with temperatures above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data. |
Description: | Restricted Access. An open-access version is available at arXiv.org (one of the alternative locations) |
URI: | http://hdl.handle.net/2289/5571 |
ISSN: | 0957-4484 1361-6528 (online) |
Alternative Location: | http://arxiv.org/abs/1210.3665 http://dx.doi.org/10.1088/0957-4484/24/22/225202 |
Copyright: | 2013 IOP Publishing Ltd. |
Appears in Collections: | Research Papers (LAMP) |
Files in This Item:
File | Description | Size | Format | |
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2013_Nanotechnology_24_225202.pdf Restricted Access | Restricted Access | 1.13 MB | Adobe PDF | View/Open Request a copy |
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