Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5271
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dc.contributor.authorPodila, Ramakrishna-
dc.contributor.authorAnand, Benoy-
dc.contributor.authorSpear, John T.-
dc.contributor.authorPuneet, P.-
dc.contributor.authorPhilip, Reji-
dc.contributor.authorSiva Sankara Sai, S.-
dc.contributor.authorRao, Apparao M.-
dc.date.accessioned2012-08-29T10:44:22Z-
dc.date.available2012-08-29T10:44:22Z-
dc.date.issued2012-03-
dc.identifier.citationNanoscal, 2012, Vol. 4, p1770en
dc.identifier.issn2040-3364-
dc.identifier.issn2040-3372 (Online)-
dc.identifier.urihttp://hdl.handle.net/2289/5271-
dc.descriptionRestricted Accessen
dc.description.abstractWe explore the effects of crystallite size (La) on the linear and non-linear optical properties of chemical vapor deposition grown polycrystalline graphene. The π-plasmon resonance present at [similar]4.75 eV ([similar]260 nm) in the optical absorption spectrum of graphene follows the empirical relationship λπ = 250.5 nm + 89.5 nm2/La, where λπ represents the π-plasmon wavelength. Furthermore, our Z-scan studies reveal that the crystallite size significantly changes the saturation intensity in CVD grown graphene. Notably, in comparison to epitaxial graphene layers grown on SiC wafers which exhibit a photogenerated carrier lifetime of few picoseconds, we find that the photogenerated carriers in our CVD grown graphene can exhibit lifetimes as long as nanoseconds.en
dc.language.isoenen
dc.publisherRSC Publishingen
dc.relation.urihttp://dx.doi.org/10.1039/C2NR11206Jen
dc.relation.urihttp://adsabs.harvard.edu/abs/2012Nanos...4.1770Pen
dc.rights2012 RSC Publishingen
dc.titleEffects of disorder on the optical properties of CVD grown polycrystalline grapheneen
dc.typeArticleen
Appears in Collections:Research Papers (LAMP)

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