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http://hdl.handle.net/2289/5250| Title: | Micro-Structural, electrical and spectroscopic investigations of pulsed laser ablated palladium incorporated nanostructured tungsten oxide films |
| Authors: | Lethy, K.J. Beena, D. Pillai, Mahadevan V.P. Suresh, K.A. |
| Keywords: | nanostructured tungsten oxide films transition metal oxides effect of palladium doping urbach energy arrhenius plot |
| Issue Date: | 2009 |
| Publisher: | American Scientific Publishers |
| Citation: | Journal of Nanoscience and Nanotechnology, 2009, Vol. 9, p5335 |
| Abstract: | Pure and Pd incorporated (0.5, 1 and 5 wt%) WO3 films are prepared on quartz substrates using pulsed laser ablation (PLD) technique in an oxygen ambient of 0.12 mbar, at a substrate temperature (Ts) of 873 K. Palladium incorporation effects on the microstructure, optical and electrical properties of tungsten oxide films are systematically investigated using techniques like X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy dispersive X-ray spectroscopy (EDX), micro-Raman spectroscopy, UV-Vis absorption spectroscopy and temperature dependent electrical resistivity measurements. The micro-structural analysis by XRD and micro-Raman indicates that Pd addition can perturb the tungsten oxide lattice and suppress the grain growth. Optical band gap values of the films increases from 3.17 eV for pure WO3 to 3.29 eV for 5 wt% Pd incorporated WO3 films. All the films present high transparency in the visible spectral range. The electrical resistivity studies of the pure and Pd incorporated films done at room temperature and for the range of temperature; 170-450 K reveal that Pd addition can lower the resistivity of the WO3 thin films. Room temperature resistivity as well as activation energy of the film decreases exponentially with Pd incorporation concentration. Highly transparent, nanocrystalline and semi-conducting WO3 films with low resistivity obtained by Pd incorporation can make WO3 suitable for microelectronics industry and for gas sensing applications. |
| Description: | Restricted Access |
| URI: | http://hdl.handle.net/2289/5250 |
| ISSN: | 1533-4880 1533-4899 (Online) |
| Alternative Location: | http://dx.doi.org/10.1166/jnn.2009.1156 |
| Copyright: | 2009 American Scientific Publishers |
| Appears in Collections: | Research Papers (SCM) |
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| 2009_J of Nanoscience and Nanotechnology_V9_p5335.pdf Restricted Access | Restricted Access | 4.72 MB | Adobe PDF | View/Open Request a copy |
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