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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5250

Title: Micro-Structural, electrical and spectroscopic investigations of pulsed laser ablated palladium incorporated nanostructured tungsten oxide films
Authors: Lethy, K.J.
Beena, D.
Pillai, V.P.M.
Suresh, K.A.
Keywords: nanostructured tungsten oxide films
transition metal oxides
effect of palladium doping
urbach energy
arrhenius plot
Issue Date: 2009
Publisher: American Scientific Publishers
Citation: Journal of Nanoscience and Nanotechnology, 2009, Vol. 9, p5335
Abstract: Pure and Pd incorporated (0.5, 1 and 5 wt%) WO3 films are prepared on quartz substrates using pulsed laser ablation (PLD) technique in an oxygen ambient of 0.12 mbar, at a substrate temperature (Ts) of 873 K. Palladium incorporation effects on the microstructure, optical and electrical properties of tungsten oxide films are systematically investigated using techniques like X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy dispersive X-ray spectroscopy (EDX), micro-Raman spectroscopy, UV-Vis absorption spectroscopy and temperature dependent electrical resistivity measurements. The micro-structural analysis by XRD and micro-Raman indicates that Pd addition can perturb the tungsten oxide lattice and suppress the grain growth. Optical band gap values of the films increases from 3.17 eV for pure WO3 to 3.29 eV for 5 wt% Pd incorporated WO3 films. All the films present high transparency in the visible spectral range. The electrical resistivity studies of the pure and Pd incorporated films done at room temperature and for the range of temperature; 170-450 K reveal that Pd addition can lower the resistivity of the WO3 thin films. Room temperature resistivity as well as activation energy of the film decreases exponentially with Pd incorporation concentration. Highly transparent, nanocrystalline and semi-conducting WO3 films with low resistivity obtained by Pd incorporation can make WO3 suitable for microelectronics industry and for gas sensing applications.
Description: Restricted Access
URI: http://hdl.handle.net/2289/5250
ISSN: 1533-4880
1533-4899 (Online)
Alternative Location: http://dx.doi.org/10.1166/jnn.2009.1156
Copyright: 2009 American Scientific Publishers
Appears in Collections:Research Papers (SCM)

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