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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5045

Title: Semiconducting ytterbium at high temperatures
Authors: Shubha, V.
Ramesh, T.G.
Ramaseshan, S.
Issue Date: Nov-1977
Publisher: IOP Publishing Ltd.
Citation: Journal of Physics F, 1977, Vol. 7, p2367-2371
Abstract: We report in this communication some new results on the resistivity behaviour of ytterbium in its semiconducting phase. In the high temperature region (T > 150'C) the temperature coefficient of resistance is strongly positive like that in a degenerate semiconductor. This correlates well with our earlier work on the thermoelectric behaviour of ytterbium at high pressures and high temperatures. Our measurements of the resistivity against pressure at room temperature and above show a distinct change in the slope accompanying the metal to semiconductor transition previously reported to be unobservable by other workers.
Description: Restricted Access
URI: http://hdl.handle.net/2289/5045
ISSN: 0305-4608
Alternative Location: http://adsabs.harvard.edu/abs/1977JPhF....7.2367S
http://dx.doi.org/10.1088/0305-4608/7/11/017
Copyright: 1977 IOP Publishing Ltd
Appears in Collections:Miscellaneous Publications

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