Semiconducting ytterbium at high temperatures

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DC Field	Value	Language
dc.contributor.author	Shubha, V.	-
dc.contributor.author	Ramesh, T.G.	-
dc.contributor.author	Ramaseshan, S.	-
dc.date.accessioned	2012-07-20T10:37:39Z	-
dc.date.available	2012-07-20T10:37:39Z	-
dc.date.issued	1977-11	-
dc.identifier.citation	Journal of Physics F, 1977, Vol. 7, p2367-2371	en
dc.identifier.issn	0305-4608	-
dc.identifier.uri	http://hdl.handle.net/2289/5045	-
dc.description	Restricted Access	en
dc.description.abstract	We report in this communication some new results on the resistivity behaviour of ytterbium in its semiconducting phase. In the high temperature region (T > 150'C) the temperature coefficient of resistance is strongly positive like that in a degenerate semiconductor. This correlates well with our earlier work on the thermoelectric behaviour of ytterbium at high pressures and high temperatures. Our measurements of the resistivity against pressure at room temperature and above show a distinct change in the slope accompanying the metal to semiconductor transition previously reported to be unobservable by other workers.	en
dc.language.iso	en	en
dc.publisher	IOP Publishing Ltd.	en
dc.relation.uri	http://adsabs.harvard.edu/abs/1977JPhF....7.2367S	en
dc.relation.uri	http://dx.doi.org/10.1088/0305-4608/7/11/017	en
dc.rights	1977 IOP Publishing Ltd	en
dc.title	Semiconducting ytterbium at high temperatures	en
dc.type	Article	en
Appears in Collections:	Miscellaneous Publications

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