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Title: Phase transitions in ytterbium under pressure
Authors: Ramesh, T.G.
Shubha, V.
Ramaseshan, S.
Issue Date: Jun-1977
Publisher: IOP Publishing Ltd.
Citation: Journal of Physics F, 1977, Vol. 7, p981-990
Abstract: The semimetal-semiconductor transition in ytterbium has been studied in the pressure range @-50 kbar and up to 600'C using the Seebeck coefficient as a tool. In the FCC phase. the thermoelectric power exhibits a marked increase with pressure and the semimetal-semiconductor transition is observed as a change in the slope. In the semiconducting phase the thermopower initially increases very rapidly with pressure followed by a steep decrease at higher pressures. The temperature coefficient of thermopower in the semiconducting phase is large and positive in contrast to the semimetallic phase. The FCC- HCP transformation at high temperatures is reported. A semimetal-semiconductor transition in the HCP phase has also been observed. The experimental results are discussed qualitatively on the basis of a simplified two-band model.
Description: Restricted Access
ISSN: 0305-4608
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Copyright: 1977 IOP Publishing Ltd
Appears in Collections:Miscellaneous Publications

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