Phase transitions in ytterbium under pressure

Ramesh, T.G.; Shubha, V.; Ramaseshan, S.

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5043

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DC Field	Value	Language
dc.contributor.author	Ramesh, T.G.	-
dc.contributor.author	Shubha, V.	-
dc.contributor.author	Ramaseshan, S.	-
dc.date.accessioned	2012-07-20T10:33:25Z	-
dc.date.available	2012-07-20T10:33:25Z	-
dc.date.issued	1977-06	-
dc.identifier.citation	Journal of Physics F, 1977, Vol. 7, p981-990	en
dc.identifier.issn	0305-4608	-
dc.identifier.uri	http://hdl.handle.net/2289/5043	-
dc.description	Restricted Access	en
dc.description.abstract	The semimetal-semiconductor transition in ytterbium has been studied in the pressure range @-50 kbar and up to 600'C using the Seebeck coefficient as a tool. In the FCC phase. the thermoelectric power exhibits a marked increase with pressure and the semimetal-semiconductor transition is observed as a change in the slope. In the semiconducting phase the thermopower initially increases very rapidly with pressure followed by a steep decrease at higher pressures. The temperature coefficient of thermopower in the semiconducting phase is large and positive in contrast to the semimetallic phase. The FCC- HCP transformation at high temperatures is reported. A semimetal-semiconductor transition in the HCP phase has also been observed. The experimental results are discussed qualitatively on the basis of a simplified two-band model.	en
dc.language.iso	en	en
dc.publisher	IOP Publishing Ltd.	en
dc.relation.uri	http://adsabs.harvard.edu/abs/1977JPhF....7..981R	en
dc.relation.uri	http://dx.doi.org/10.1088/0305-4608/7/6/014	en
dc.rights	1977 IOP Publishing Ltd	en
dc.title	Phase transitions in ytterbium under pressure	en
dc.type	Article	en
Appears in Collections:	Miscellaneous Publications

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