Optical nonlinearity in lead sulfide microtowers

Tamilselvan, V.; Sridharan, Kishore; Rao, Narasimha K.; Philip, Reji

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/4049

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DC Field	Value	Language
dc.contributor.author	Tamilselvan, V.	-
dc.contributor.author	Sridharan, Kishore	-
dc.contributor.author	Rao, Narasimha K.	-
dc.contributor.author	Philip, Reji	-
dc.date.accessioned	2011-05-10T07:47:09Z	-
dc.date.available	2011-05-10T07:47:09Z	-
dc.date.issued	2010-09-29	-
dc.identifier.citation	Journal of Physics D: Applied Physics, 2010, Vol.43, 385402	en
dc.identifier.issn	0022-3727	-
dc.identifier.issn	1361-6463 (Online)	-
dc.identifier.uri	http://hdl.handle.net/2289/4049	-
dc.description	Restricted Access.	en
dc.description.abstract	Lead sulfide (PbS) microtowers on silicon substrates, having the physical properties of bulk PbS, have been synthesized. Optical nonlinearity studies using the open aperture z-scan technique employing 5 ns and 100 fs laser pulses reveal effective two-photon type absorption. For nanosecond excitation the nonlinear absorption coefficients (βeff) are in the order of 10−11 m W−1, two orders of magnitude less than the values reported for quantum confined PbS nanocrystals. For femtosecond excitation βeff is of the order of 10−14 m W−1. These results obtained in bulk PbS experimentally confirm the importance of quantum confinement in the enhancement of optical nonlinearities in semiconductor materials	en
dc.language.iso	en	en
dc.publisher	IOP Publishing Ltd.	en
dc.relation.uri	http://iopscience.iop.org/0022-3727/43/38/385402	en
dc.relation.uri	http://adsabs.harvard.edu/abs/2010JPhD...43L5402T	en
dc.rights	2010 IOP Publishing Ltd.	en
dc.title	Optical nonlinearity in lead sulfide microtowers	en
dc.type	Article	en
Appears in Collections:	Research Papers (LAMP)

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