RRI Digital Repository >
05. Light and Matter Physics >
Research Papers (LAMP) >
Please use this identifier to cite or link to this item:
|Title: ||Structural and nonlinear optical properties of self-assembled SnO2-doped silicon nanorings formed by pulsed laser ablation|
|Authors: ||Rani, J.R.|
Mahadevan Pillai, V.P.
Suchand Sandeep, C.S.
|Issue Date: ||May-2008 |
|Publisher: ||Electrochemical Society|
|Citation: ||Electrochemical and Solid-State Letters 11, K73, 2008|
|Abstract: ||SnO2-doped Si nanorings with an outer diameter of 25 nm and an average width of 5 nm are grown by pulsed laser deposition. Atomic force microscopy reveals several interesting self-assembling forms of polycrystalline as well as an amorphous type of silicon nanorings. Depending on the width of the ring, the optical bandgap and photoluminescence can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV), giving evidence for the strong quantum confinement effect along the width of ringlike quantum states. From Z-scan studies, the two-photon absorption coefficient is determined to be 2.2Ã—10âˆ’6 m/W.|
|Description: ||Open Access. Also in ``Virtual Journal of Nanoscale Science and Technology", Vol.17(22), 2nd June 2008|
|ISSN: ||P-ISSN: 1099-0062|
|Alternative Location: ||http://dx.doi.org/10.1149/1.2928841|
|Copyright: ||2008 The Electrochemical Society, Inc. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters 11, K73, 2008.|
|Appears in Collections:||Research Papers (LAMP)|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.