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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2289/2686
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| Title: | Ultra-low noise GaAs FET amplifiers for L and C bands |
| Authors: | Ganesan, R.
Mascarenhas, S.
Sarma, N.V.G. |
| Issue Date: | 1984 |
| Citation: | Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111 |
| Abstract: | Ultra Low Noise Gals PET amplifiers incorporati& source
inductance feedback to obtain low input VSWR have been deacribed.
The measured average noise temperature of 52K -
(~oise Figure 0.7d~) at room temperature of the L-Band Amplifier
reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera-
. ture of 24K. The C-Band Amplifier has an average noiae temperature
of 120K (~oise Figure 1,Sd~) at room temperature. |
| Description: | Restricted Access. |
| URI: | http://hdl.handle.net/2289/2686 |
| Appears in Collections: | Research Papers (A&A)
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