DSpace
 

RRI Digital Repository >
04. Astronomy and Astrophysics >
Research Papers (A&A) >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2686

Title: Ultra-low noise GaAs FET amplifiers for L and C bands
Authors: Ganesan, R.
Mascarenhas, S.
Sarma, N.V.G.
Issue Date: 1984
Citation: Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111
Abstract: Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature.
Description: Restricted Access.
URI: http://hdl.handle.net/2289/2686
Appears in Collections:Research Papers (A&A)

Files in This Item:

File Description SizeFormat
1984 Proc national symp on microwave comm systems p98.pdfRestricted Access583.08 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

    RRI Library DSpace