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|Title: ||Ultra-low noise GaAs FET amplifiers for L and C bands|
|Authors: ||Ganesan, R.|
Mascarenhas, Smiles K.
|Issue Date: ||1984 |
|Citation: ||Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111|
|Abstract: ||Ultra Low Noise Gals PET amplifiers incorporati& source
inductance feedback to obtain low input VSWR have been deacribed.
The measured average noise temperature of 52K -
(~oise Figure 0.7d~) at room temperature of the L-Band Amplifier
reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera-
. ture of 24K. The C-Band Amplifier has an average noiae temperature
of 120K (~oise Figure 1,Sd~) at room temperature.|
|Description: ||Restricted Access.|
|Appears in Collections:||Research Papers (A&A)|
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