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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2686

Title: Ultra-low noise GaAs FET amplifiers for L and C bands
Authors: Ganesan, R.
Mascarenhas, Smiles K.
Sarma, N.V.G.
Issue Date: 1984
Citation: Proceedings of the national symposium on microwave communication systems, Madras, 1984, p98-111
Abstract: Ultra Low Noise Gals PET amplifiers incorporati& source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a tempera- . ture of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature.
Description: Restricted Access.
URI: http://hdl.handle.net/2289/2686
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