A new approach to electronic transitions in the samarium monochalcogenides

Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2663

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DC Field	Value	Language
dc.contributor.author	Narayan, R.	-
dc.contributor.author	Ramaseshan, S.	-
dc.date.accessioned	2007-06-11T06:18:54Z	-
dc.date.available	2007-06-11T06:18:54Z	-
dc.date.issued	1981-01	-
dc.identifier.citation	Journal of Physics C, 1981, Vol.14, p211-227	en
dc.identifier.issn	0022-3719	-
dc.identifier.uri	http://hdl.handle.net/2289/2663	-
dc.description	Restricted Access.	en
dc.description.abstract	The samarium monochalcogenides are treated here as ionic crystals with the samarium ion having anomalous compression characteristics arising from the easy delocalisation of a 4f electron. The compression curve of the samarium ion has been determined from experimental PV data in SmS while the compression curves of the chalcogen ions are already available. It is postulated that the compression properties of samarium are the same in all crystals. The theory successfully predicts the following: (i) the transition pressures in SmSe and SmTe; (ii) the occurrence of continuous and discontinuous transitions; (iii) the slope of the phase boundary in SmS; (iv) the properties of Sm1-xGdxS mixed crystals; (v) the optical band gaps.	en
dc.format.extent	747762 bytes	-
dc.format.mimetype	application/pdf	-
dc.language.iso	en	en
dc.publisher	IOP Publishing Ltd.	en
dc.relation.uri	http://dx.doi.org/10.1088/0022-3719/14/3/005	en
dc.rights	1981 IOP Publishing Ltd.	en
dc.title	A new approach to electronic transitions in the samarium monochalcogenides	en
dc.type	Article	en
Appears in Collections:	Research Papers (TP)

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