Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/2251
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dc.contributor.authorNavinder Singh-
dc.contributor.authorKumar, N.-
dc.date.accessioned2007-04-09T10:59:02Z-
dc.date.available2007-04-09T10:59:02Z-
dc.date.issued2005-06-
dc.identifier.citationJournal of Statistical Mechanics, 2005, L06001en
dc.identifier.issn1572-9613-
dc.identifier.urihttp://hdl.handle.net/2289/2251-
dc.descriptionRestricted Access.en
dc.description.abstractGeneralizing the stochastic model known for a driven dissipative granular gas, we have derived the steady-state non-degenerate electron distribution for a semiconductor driven far from equilibrium by the interband photo-excitation assumed uniform over the nanoscale sample. Partitioning of the total inelastic electron scattering into dissipative electron–electron and electron–phonon components is included. The model is applicable to a photo-excited semiconducting sample with fast removal of the electrons by electron–hole recombination from the bottom of the conduction band.en
dc.format.extent411448 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.relation.urihttp://dx.doi.org/10.1088/1742-5468/2005/06/L06001en
dc.relation.urihttp://arxiv.org/abs/cond-mat/0501479-
dc.rights2005 IOP Publishing Ltd.en
dc.subjectdissipative systems (theory)en
dc.subjectdisordered systems (theory)en
dc.titleDissipative electron–phonon system photo-excited far from equilibriumen
dc.typeArticleen
Appears in Collections:Research Papers (LAMP)

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