Phase transitions in ytterbium under pressure
| dc.contributor.author | Ramesh, T G | |
| dc.contributor.author | Shubha, V | |
| dc.contributor.author | Ramaseshan, S | |
| dc.date.accessioned | 2012-07-20T10:33:25Z | |
| dc.date.available | 2012-07-20T10:33:25Z | |
| dc.date.issued | 1977-06 | |
| dc.description | Restricted Access | en |
| dc.description.abstract | The semimetal-semiconductor transition in ytterbium has been studied in the pressure range @-50 kbar and up to 600'C using the Seebeck coefficient as a tool. In the FCC phase. the thermoelectric power exhibits a marked increase with pressure and the semimetal-semiconductor transition is observed as a change in the slope. In the semiconducting phase the thermopower initially increases very rapidly with pressure followed by a steep decrease at higher pressures. The temperature coefficient of thermopower in the semiconducting phase is large and positive in contrast to the semimetallic phase. The FCC- HCP transformation at high temperatures is reported. A semimetal-semiconductor transition in the HCP phase has also been observed. The experimental results are discussed qualitatively on the basis of a simplified two-band model. | en |
| dc.identifier.citation | Journal of Physics F, 1977, Vol. 7, p981-990 | en |
| dc.identifier.issn | 0305-4608 | |
| dc.identifier.uri | http://hdl.handle.net/2289/5043 | |
| dc.language.iso | en | en |
| dc.publisher | IOP Publishing Ltd. | en |
| dc.relation.uri | http://adsabs.harvard.edu/abs/1977JPhF....7..981R | en |
| dc.relation.uri | http://dx.doi.org/10.1088/0305-4608/7/6/014 | en |
| dc.rights | 1977 IOP Publishing Ltd | en |
| dc.title | Phase transitions in ytterbium under pressure | en |
| dc.type | Article | en |
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