Rotational viscosity in the ferroelectric C* phase - A high pressure study
| dc.contributor.author | Khened, S.M. | |
| dc.contributor.author | Krishna Prasad, S. | |
| dc.contributor.author | Raja, V.N. | |
| dc.contributor.author | Chandrasekhar, S. | |
| dc.contributor.author | Shivkumar, B. | |
| dc.date.accessioned | 2007-06-21T06:15:12Z | |
| dc.date.available | 2007-06-21T06:15:12Z | |
| dc.date.issued | 1992-11 | |
| dc.description | Restricted Access. | en |
| dc.description.abstract | Since the demonstration of microsecond switching using ferroelectric liquid crystals, these materials are considered as key substances for fast electro-optic response, memory effect and other kinds of LCD applications. A basic parameter which decides the speed of electro-optic response is the rotational viscosity γΦ. This property, which is associated with the motion of the molecule around a cone of azimuthal angles is also important in understanding the dynamics of switching. We have performed high pressure studies on a compound exhibiting the ferroelectric-paraelectric (Smectic C*-Smectic A) transition. The results show that the thermal variation of γΦ is of the arrhenius type and its value increases with increasing pressure. | en |
| dc.format.extent | 101880 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Recent Trends in High Pressure Research: Proceedings of the Xiii Airapt International Conference on High Pressure Science and Technology 7-11 October 1991, World Scientific, 1992, p526-528 | en |
| dc.identifier.isbn | 978-8120407138 | |
| dc.identifier.uri | http://hdl.handle.net/2289/3046 | |
| dc.language.iso | en | en |
| dc.publisher | World Scientific | en |
| dc.rights | 1992 World Scientific | en |
| dc.title | Rotational viscosity in the ferroelectric C* phase - A high pressure study | en |
| dc.type | Article | en |