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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/4008
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dc.contributor.authorVinodkumar, R.-
dc.contributor.authorNavas, I.-
dc.contributor.authorChalana, S.R.-
dc.contributor.authorGopchandran, K.G.-
dc.contributor.authorGanesan, V.-
dc.contributor.authorPhilip, Reji-
dc.contributor.authorSudheer, S.K.-
dc.contributor.authorPillai, Mahadevan V.P.-
dc.date.accessioned2011-04-08T07:20:28Z-
dc.date.available2011-04-08T07:20:28Z-
dc.date.issued2010-11-15-
dc.identifier.citationApplied Surface Science , 2010, Vol.257, p708en
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/2289/4008-
dc.descriptionRestricted Access.en
dc.description.abstractAl doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E-2 mode and longitudinal optical A(1) (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of similar to 75% in the visible and near infrared region and low dc electrical resistivity of 5.94x10(-6) Omega m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film.en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2010.07.044en
dc.rights2010 Elsevier B. V.en
dc.titleHighly conductive and transparent laser ablated nanostructured Al: ZnO thin filmsen
dc.typeArticleen
Appears in Collections:Research Papers (LAMP)

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