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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/3046
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dc.contributor.authorKhened, S.M.-
dc.contributor.authorKrishna Prasad, S.-
dc.contributor.authorRaja, V.N.-
dc.contributor.authorChandrasekhar, S.-
dc.contributor.authorShivkumar, B.-
dc.date.accessioned2007-06-21T06:15:12Z-
dc.date.available2007-06-21T06:15:12Z-
dc.date.issued1992-11-
dc.identifier.citationRecent Trends in High Pressure Research: Proceedings of the Xiii Airapt International Conference on High Pressure Science and Technology 7-11 October 1991, World Scientific, 1992, p526-528en
dc.identifier.isbn978-8120407138-
dc.identifier.urihttp://hdl.handle.net/2289/3046-
dc.descriptionRestricted Access.en
dc.description.abstractSince the demonstration of microsecond switching using ferroelectric liquid crystals, these materials are considered as key substances for fast electro-optic response, memory effect and other kinds of LCD applications. A basic parameter which decides the speed of electro-optic response is the rotational viscosity γΦ. This property, which is associated with the motion of the molecule around a cone of azimuthal angles is also important in understanding the dynamics of switching. We have performed high pressure studies on a compound exhibiting the ferroelectric-paraelectric (Smectic C*-Smectic A) transition. The results show that the thermal variation of γΦ is of the arrhenius type and its value increases with increasing pressure.en
dc.format.extent101880 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.publisherWorld Scientificen
dc.rights1992 World Scientificen
dc.titleRotational viscosity in the ferroelectric C* phase - A high pressure studyen
dc.typeArticleen
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