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Title: Critical-current variation with Pr content in Y1−xPrxBa2Cu3O7 epitaxial films
Authors: Hegde, M.S.
Thomas, B.
Vasanthacharya, N.Y.
Bhat, S.V.
Srinivasu, V.V.
Kumar, N.
Rao, C.N.R.
Issue Date: Sep-1993
Publisher: The American Physical Society
Citation: Physical Review B, 1993, Vol. 48, p6465
Abstract: c-axis-oriented epitaxial Y1-xPrxBa2Cu3O7 (x=0, 0.05, 0.1, 0.2, 0.3, and 0.35) thin films have been grown with the pulsed-laser-deposition method. Superconducting transition temperatures of the films are within +/-2 K of the corresponding polycrystalline bulk samples. The critical current density Jc of Pr-doped films for x=0.1-0.3 is about two orders of magnitude lower than of the pure 1:2:3 films. This exponential fall in Jc with doping (x) can be understood semiquantitatively in terms of depairing due to a random-impurity (Pr-ion) potential causing localized suppression of the superconducting order parameter around the impurity to about the in-plane coherence length.
Description: Restricted Access
ISSN: 1098-0121
1550-235X (Online)
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Copyright: 1993 The American Physical Society
Appears in Collections:Research Papers (TP)

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