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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5179

Title: Temperature dependence of hole mobility in Mott insulators: normal-state resistivity of high Tc superconductors
Authors: Kumar, N.
Issue Date: Jul-1989
Publisher: The American Physical Society
Citation: Physical Review B, 1989, Vol.40, p844
Abstract: We consider the diffusion of a hole injected in a Mott insulator described by a one-band Hubbard Hamiltonian at half-filling and in the atomic limit. The diffusion coefficient turns out to be temperature independent exactly giving 1/T dependence for the drift mobility via the Einstein relation. This is in marked disagreement with the (1/T)1/2 dependence obtaining in the self-retracing path approximation at low temperatures. We note the possible relevance of our result to the linear T dependence of the normal-state resistivity observed in the high-Tc oxide superconductors.
Description: Restricted Access
URI: http://hdl.handle.net/2289/5179
ISSN: 1098-0121
1550-235X (Online)
Alternative Location: http://dx.doi.org/10.1103/PhysRevB.40.844
http://adsabs.harvard.edu/abs/1989PhRvB..40..844K
Copyright: 1989 The American Physical Society
Appears in Collections:Research Papers (TP)

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