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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5158

Title: Temperature dependence of the c-axis resistivity of high-Tc layered oxides
Authors: Kumar, N.
Jayannavar, A.M.
Keywords: Theory of electronic transport
Scattering mechanisms
Electrical and thermal conduction in crystalline metals and alloys
Issue Date: Mar-1992
Publisher: The American Physical Society
Citation: Physical Review B, 1992, Vol. 45, p5001
Abstract: Electrical transport along the c axis of high-Tc layered oxides is pictured as a coherent interplanar tunneling between neighboring layers blocked by repeated intraplanar incoherent scatterings. This gives the same temperature dependence for the c-axis resistivity as that for the in-plane resistivity. Additional temperature dependence can arise from the temperature-dependent renormalization of the tunneling matrix element by an ohmic coupling to adiabatic phonons because of the large effective electron mass along the c axis. Our calculation is consistent with recent experimental results on single crystals, and makes some definite predictions that can be put to test.
Description: Restricted Access
URI: http://hdl.handle.net/2289/5158
ISSN: 1098-0121
1550-235X (Online)
Alternative Location: http://dx.doi.org/10.1103/PhysRevB.45.5001
http://adsabs.harvard.edu/abs/1992PhRvB..45.5001K
Copyright: 1992 The American Physical Society
Appears in Collections:Research Papers (TP)

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