Please use this identifier to cite or link to this item:
http://hdl.handle.net/2289/5057| Title: | Critical point for the S → M transition in SmS |
| Authors: | Shubha, V. Ramesh, T.G. Ramaseshan, S. |
| Issue Date: | 1978 |
| Publisher: | Elsevier B.V. |
| Citation: | Solid State Communications, 1978, Vol. 26, p173-175 |
| Abstract: | The critical point for the isostructural black to metallic phase transition in SmS has been determined using thermoelectric power as a probe. The magnitude of the thermo-power anomaly accompanying this electronic phase transition continuously decreases with the increase of temperature. Further the pressure hysteresis between the forward and reverse transitions progressively decreases as the critical point is approached. The present study indicates that the critical point is close to 825°C. |
| Description: | Restricted Access |
| URI: | http://hdl.handle.net/2289/5057 |
| ISSN: | 0038-1098 |
| Alternative Location: | http://adsabs.harvard.edu/abs/1978SSCom..26..173S http://dx.doi.org/10.1016/0038-1098(78)91064-5 |
| Copyright: | 1978 Elsevier B.V. |
| Appears in Collections: | Miscellaneous Publications |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1978_Solid State Communications_V26_p173.pdf | Restricted Access | 175.02 kB | Adobe PDF | View/Open |
Items in RRI Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.