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Please use this identifier to cite or link to this item: http://hdl.handle.net/2289/5057

Title: Critical point for the S → M transition in SmS
Authors: Shubha, V.
Ramesh, T.G.
Ramaseshan, S.
Issue Date: 1978
Publisher: Elsevier B.V.
Citation: Solid State Communications, 1978, Vol. 26, p173-175
Abstract: The critical point for the isostructural black to metallic phase transition in SmS has been determined using thermoelectric power as a probe. The magnitude of the thermo-power anomaly accompanying this electronic phase transition continuously decreases with the increase of temperature. Further the pressure hysteresis between the forward and reverse transitions progressively decreases as the critical point is approached. The present study indicates that the critical point is close to 825°C.
Description: Restricted Access
URI: http://hdl.handle.net/2289/5057
ISSN: 0038-1098
Alternative Location: http://adsabs.harvard.edu/abs/1978SSCom..26..173S
http://dx.doi.org/10.1016/0038-1098(78)91064-5
Copyright: 1978 Elsevier B.V.
Appears in Collections:Miscellaneous Publications

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